Structural behavior of RF magnetron sputtered cuprous oxide (Cu2O) films

Ali Nadhom Khilkhal

Abstract


In this paper a Cu2O thin film, has been deposited using RF sputtering technique, then the thin film has been characterized by XRD, result obtained showed that strongest peak was 61.3967 degree, and FWHM was 0.215 degree, while lattice constant was 4.26 Aº, and the average grain size was 44.87 nm. While AFM analysis showed that the increasing of another four samples temperature led to increase of roughness average from (3.39 to 9.2) nm, root mean square from (3.92 to 10.7) nm and ten points height from (13.7 to 36.3) at 250,300,350 and 400 C respectively. On the other hand granularity cumulation distribution charts showed average diameter has varied from (43.31 to 51.28) nm with grain numbers per line ( 739, to 414) respectively.

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