Studying the capacitance – voltage (C-V) characteristics for the metal- oxide-semiconductor field- effect transistor MOSFET fabricated by photolithography technique

Adel H.AL-Kahyatt, E.M. Abass, Y.N. Obaid, .A.S. Al-Rowass

Abstract


This paper contain the fabrication of metal-oxide- semiconductor field- effect
transistor MOSFET by using the lithography technique and studying of (C-V)
characteristics in the reveres and forward bias and the effect of frequency variation on it,
with calculate some important physical variable parameters for it.
The fabricated transistor by using p- type silicon as a substrate has n-type channel (n-
MOSFET) its length and width equal to L=50 μm ,Z = 1000μm . The results showed that
JOURNAL OF KUFA – PHYSICS Vol.1 No.1
A Special Issue for the 2nd Conference of Pure & Applied Sciences (11-12) March
 2009
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the capacity (CG) was decreases with the increasing of the gate voltage VG in the reverse
bias with frequencies (100,200,400,500) KHz, and the capacity decreases with the
increasing of the applied current frequency. The results also showed that the capacity CG
increases with the increasing of the gate voltage VG in the forward bias with the same
frequencies and the capacity decreases with the increasing of the applied current
frequency. The behavior of capacity-voltage in the forward and reveres biases is in good
agreement with the theoretical behavior of the transistor.


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