The development and studies the current – voltage (I-V) characteristics for the metal- oxide-semiconductor

Adel H.AL-Kiat, E. M.Abass, Y.N. Obaid, A.S. Al-Rowass

Abstract


This paper contain the preparation of metal-oxide- semiconductor field- effect
transistor MOSFET by using the lightography technique. In this work we studied (IV)
characteristics and also some physical variables for transistor calculated.
The prepared transistor by using p- type silicon as a substrate has n-type channel
(nMOSFET) its length and width equal to L=50 μm ,Z = 1000μm . The results
showed that the output characteristics (ID-VD) and the trasfer charasteristics (ID-VG)
was in agreement with the theoretical behaviour of the transistor , and the transistor is
JOURNAL OF KUFA – PHYSICS Vol.3 NO.1(2011)
عادل حبيب عمران , أحسان محسه عباس , ياسيه وجم عبيد , أطياف صبحي الرواس
24
from the normally – on type nMOSFET depletion mode , with pinch – off voltage
equal to -4 volt .


Full Text:

PDF

References


References ; بلوصةدس

-2 أطل أملص إ " حًنننةئظ أشنننحة بلو صْنننلاذ ف ض٘ نٗنننةه

زّق دٌ٘ "ا زشغوند ف نِش غةلنث ؾ ن٘ةز ؾّغن ي٘ علن 2 ل :: أؾوذ ا غةهعد بلو صْل ا 1

-E.S.Yang ," Microelectronic

devices", MaGraw-Hill Book

Co.,Singapore,1986.

-K.Ng. Kowk, " Complete guide to

semiconductor devices" , McGraw –

Hill , Inc. , New York , 1995 .

-5 أط ن٘نةث صنحؿ بلننش بّط ا " زنرض ش٘ بلاشنعة علنن حًةئظ ؾةغض ش زْك لأسع ذٌ٘ بلكةل مْ٘ " ا أطش ؾّد

دكس سْبخ ا كل د٘ بلسشج د٘ ا غةهعد بلو صْنل ا ::: 2

ل

- R.K. Watts , J.H.Bruning , "Areview

of fine-line lithographic techniques :

present and future " , Solid State

Technol., Vol. 24,No.5 , 1981 ,

pp.99-108.

-E.C.Doglas ," Advanced process

technology for VLSI circuits ", Solid

State Technol. , Vol.2, No.5 , 1981 , pp.

-73 .

-S.R.Hofstein , F.P.Heiman, " The

silicon insulated – gate field – effect

transistor " , Proc.IEEE, Vol.51, 1963,

pp.1190-1202.

- د ل س دّ ا " بلوننننذخل بلنننن بلالكسش نً٘ننننةذ

بلذق ق٘ننند "ا زعش نٗننث هنننةصى عحنننذ بلؿو ن٘ننذ كنننةظن ا

بلػةهع بلسك لٌ غْ د٘ ا 2:98 ل

-T.Hori, " Inversion layer mobility

under high normal field in nitridedoxide

MOSFET " , IEEE transctions

of electron devices , Vol.37, No.9 ,

, pp.2058-2068 .

-A.Levinson , J.Shepherd ,

F.R.Scanton , P.J West wood

,J.Appl.Phys. Vol.8 , 1982, pp. 1993-

.

-B.E.Deal ," Standrized terminology

for oxide charges associated with

thermally oxidized silicon " , IEEE

Trans. Electron devices , Vol.27

,1990, pp. 606-609 .

-M.R. Wordeman ," The effect of

different doping concentration and oxide

thichness on the inversion layer electron

mobility " , Dectoral dissevtation ,

Columbia University , New York ,1985.


Refbacks

  • There are currently no refbacks.